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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD898 DESCRIPTION *With TO-3 package *Built-in damper diode *High voltage ,high power dissipation *Wide area of safe operation APPLICATIONS *For TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 1500 6 3 3.5 50 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD898 MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0; 6 V VCEsat VBEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8 A IC=2.5A;IB=0.8 A 5.0 V Base-emitter saturation voltage 1.5 V ICES Collector cut-off current VCE=1500V;RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V;IC=0 50 200 mA hFE DC current gain IC=0.5A ; VCE=5V 10 40 VF Diode forward voltage IF=3A 2.2 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD898 Fig.2 Outline dimensions 3 |
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